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Maurizio Martino

University of Salento,

Dipartimento di

Matematica e Fisica

"Ennio De Giorgi"

Via Arnesano, 73100 Lecce, Italy ph: (39) 0832 297495

fax: (39) 0832 297505

 maurizio.martino@le.infn.it

 diamond graphitizazion by laser irradiation

 modified on 17/06/2012

  •  

  • We faced this challenge with a novel idea graphitization of the diamond surface with a gas excimer laser and creation of nano-graphite layer of about hundred nanometers. The diamond surface graphitization process is possible if the laser is absorbed by the diamond surface and the intensity is tuned to make the transition diamond-graphite thermodynamically favorite without ablating the material .

    We realized a detector-grade diamond material with graphitic electric contacts using a focused UV laser light. The nano-graphitic layer was mechanically stable and electrically conductive in both sides. The surface resistivity was measured with a multimeter and was about 40 Ohms, in agreement with the literature values.

    The response to a gamma- ray source of the detector were measured for the first time. These preliminary measurements show that the pad detector with graphitized contact is capable to detect ionizing radiation in counting mode. A comparison was made between this detector and a reference detector made of same quality diamond but metallic electric contacts and no significant differences were seen.

    The device was prepared by front and back irradiation of the diamond surfaces with a 193 nm UV ArF excimer laser (Lambda Physik LPX305i).

     

    Figure 1. Optical microscopy image of detector-grade poly-crystal CVD diamond with dimensions 5x5x0.3 mm3 with photo-generated graphite electrical contact made on the both sides.

    The laser emitted 20 nsec long pulse with an energy of about 160 mJ/pulse at 10 Hz repetition rate. In order to focus the UV laser and reach therequired energy density per pulse an appropriate UV focusing system was needed. The laser beam with a transverse size of about 20×10 mm2 , was directed onto a homogenizer single matrix. The homogenized beam was then directly projected via a thin and plain convex lens onto the sample.

    The sample was placed in a holder and rigidly fixed to a x-y movable stage. The x and y positions were controlled by two step computer assisted motors.

    The focused image was a square of 3 mm2 at the sample surface and having a local laser fluence of about 5 J/cm2 quite constant within the radiation spot. The device was treated in air at room temperature and the surface was scan at a velocity of about 0.3 mm/s to obtain a graphite electrode with a final total area of about 9 mm2 large enough to realize a pad detector.

    This treatment was repeated on the other side of the surface sample (Figure 1) in order to realize a solid state radiation detector in planar configuration. The device was fixed between two gold made clamps in order to apply the high voltage by a  SMA connector and enclosed in an aluminum box to electrically shield it.

    The reference device was a commercially available poly-crystal diamond detector of the same size 5x5x0.3mm3 and material quality but with DLC/Pt/Au electrical contacts fabricated on both faces (planar configuration) with proprietary contact technology. The detector was glued on a printed circuit board in one side and the two electrodes wire bonded to a SMA connector and enclosed also in an anodized aluminum box.

    A low intensity 60Co gamma-ray source was placed above the detectors at a distance of 1 cm in air at room temperature. The front-side electrode was used as the signal output and connected, through ORTEC charge sensitive preamplifier and spectroscopy amplifier ( 100mV/fC total gain and 0.5 μs shaping-time ), to an oscilloscope and waveforms were recorded by GPIB protocol.

    Figure 2. Single gamma response to 60Co gamma source from reference diamond detector (waveforms a) and from diamond detector with laser-graphitized electrodes (waveforms b) for an applied voltage of about 300 V

    Figure 2 shows the response of the two devices to gamma radiations. The response is very similar showing that the nanographitic layer is not a source of minority carriers trapping. This preliminary result is very important to establish the good charge injection and collection properties of the contacts, in addition to mechanical adhesion and mechanical stability.

in collaboration with  Institute of General Physics, Moscow, Russia;

Lecce Laser Laboratory

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